7 July 1998 Bandgap renormalization: GaAs/AlGaAs quantum wells
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Abstract
Bandgap energy renormalization by many-body interactions has been studied in a series of n-type 8-nm-wide GaAs/AlGaAs single quantum wells using magnetoluminescence spectroscopy at 1.4 K and for magnetic fields up to 30 T. The 2D-carrier densities varied between 1 and 12 X 1011 cm-2. At the maximum 2D-carrier density, the bandgap energy difference between the doped and undoped samples was about 34 meV.
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Eric D. Jones, Mark Blount, Weng W. Chow, Hong Q. Hou, Jerry A. Simmons, Yongmin Kim, Thomas Schmiedel, "Bandgap renormalization: GaAs/AlGaAs quantum wells", Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, (7 July 1998); doi: 10.1117/12.316668; https://doi.org/10.1117/12.316668
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