7 July 1998 Bandgap renormalization: GaAs/AlGaAs quantum wells
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Bandgap energy renormalization by many-body interactions has been studied in a series of n-type 8-nm-wide GaAs/AlGaAs single quantum wells using magnetoluminescence spectroscopy at 1.4 K and for magnetic fields up to 30 T. The 2D-carrier densities varied between 1 and 12 X 1011 cm-2. At the maximum 2D-carrier density, the bandgap energy difference between the doped and undoped samples was about 34 meV.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eric D. Jones, Eric D. Jones, Mark Blount, Mark Blount, Weng W. Chow, Weng W. Chow, Hong Q. Hou, Hong Q. Hou, Jerry A. Simmons, Jerry A. Simmons, Yongmin Kim, Yongmin Kim, Thomas Schmiedel, Thomas Schmiedel, } "Bandgap renormalization: GaAs/AlGaAs quantum wells", Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, (7 July 1998); doi: 10.1117/12.316668; https://doi.org/10.1117/12.316668

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