7 July 1998 Beam filamentation and its control in high-power semiconductor lasers
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Abstract
We experimentally measure the first-order spatio-temporal characteristics of filamentation and discover effects of the stripe width. We use an analytic theory to explain and reproduce these results through an expression for the filament gain, in which contributions of various mechanisms can clearly be seen. Through this model and computer simulations, we determine the stability boundaries of the material parameters for which the device will not exhibit filamentary tendencies. We then propose a new method of controlling filamentation using below-bandgap semiconductor nonlinearities. With simulations, we determine under what conditions this imposed nonlinearity can counteract the carrier-induced self-focusing inside the active region.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John R. Marciante, John R. Marciante, Govind P. Agrawal, Govind P. Agrawal, } "Beam filamentation and its control in high-power semiconductor lasers", Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, (7 July 1998); doi: 10.1117/12.316661; https://doi.org/10.1117/12.316661
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