7 July 1998 Calculations for the optimization of channel waveguides made by the sol-gel process
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Abstract
Sol-gel process appears as an interesting alternative to realize optical integrated devices working at 1.55 micrometers wavelength in reason of the low cost of the materials and equipment used and the good performances realized. The principle of fabrication is to deposit a photocurable sol- gel layers on a substrate like silicon and to imprint waveguides through a predefined mask with an UV light. The buried quasi-symmetrical waveguides achieved are well adapted to the use of the Galerkin's method associated with Hermite-Gauss basis functions to resolve scalar, semi- vectorial and vectorial waves equations. Optical integrated devices can be simulated in many steps. In a first time, the device is dividing into several cross sections. Transverse field is, then, calculated by series expansion to determine the mode amplitudes of each section. The field propagation is determined in establishing a relation between the coefficients of two consecutive sections. The description of the transverse sections is easily realized region after region. Each region presenting a constant refractive index, an analytical formulation is given. From this calculation method, the optimizations of a transverse structure achieved by sol-gel process is made according with the fabrication parameters. Propagation method is, then, applied an can be generalized to study optical integrated passive devices.
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Jerome Porque, Jerome Porque, Paul Coudray, Paul Coudray, Yves Moreau, Yves Moreau, Pascal Etienne, Pascal Etienne, "Calculations for the optimization of channel waveguides made by the sol-gel process", Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, (7 July 1998); doi: 10.1117/12.316717; https://doi.org/10.1117/12.316717
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