7 July 1998 Carrier lifetime calculations and modulation response of intersubband semiconductor lasers
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Abstract
A self-consistent rate equation analysis of the direct current modulation response is performed through a calculation of the relevant carrier and tunneling lifetimes for a prototype triple quantum well structure suitable for incorporation in intersubband lasers. Opportunities for accessing predicted THz modulation response capabilities in such devices are examined. The intersubband optical gain spectra of these devices are investigated.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. Y. L. Cheung, Keith Alan Shore, "Carrier lifetime calculations and modulation response of intersubband semiconductor lasers", Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, (7 July 1998); doi: 10.1117/12.316691; https://doi.org/10.1117/12.316691
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