Current self-distribution effect in vertical-cavity surface-emitting semiconductor lasers

Vladimir A. Smagley; Gennady A. Smolyakov; Petr Georgievich Eliseev; Marek Osinski; Andrzej J. Przekwas

doi:10.1117/12.316681

7 July 1998 Current self-distribution effect in vertical-cavity surface-emitting semiconductor lasers

Vladimir A. Smagley, Gennady A. Smolyakov, Petr Georgievich Eliseev, Marek Osinski, Andrzej J. Przekwas

Proceedings Volume 3283, Physics and Simulation of Optoelectronic Devices VI; (1998) https://doi.org/10.1117/12.316681
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

A versatile electro-thermal and optical numerical simulation tool has been developed that can handel various types of vertical-cavity surface-emitting laser designs. As an example, we consider a cylindrically symmetric top-emitting mesa laser with an oxide window. The control-volume-based model provides spatial distributions of carrier density in the active region plane as well as electrical potential, current density and temperature distributions in the entire device. We focus our attention on current redistribution processes, and find out that the current crowding effect is strongly affected by the presence of oxide window. In addition to the geometry-related crowding, we describe the current self-distribution (CSD) effect related to spatially non-uniform stimulated recombination. The CSD is shown to counteract the spatial hole-burning caused by carrier consumption through intense stimulated emission.

Citation Download Citation

Vladimir A. Smagley, Gennady A. Smolyakov, Petr Georgievich Eliseev, Marek Osinski, and Andrzej J. Przekwas "Current self-distribution effect in vertical-cavity surface-emitting semiconductor lasers", Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, (7 July 1998); https://doi.org/10.1117/12.316681

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