7 July 1998 Current self-distribution effect in vertical-cavity surface-emitting semiconductor lasers
Author Affiliations +
Abstract
A versatile electro-thermal and optical numerical simulation tool has been developed that can handel various types of vertical-cavity surface-emitting laser designs. As an example, we consider a cylindrically symmetric top-emitting mesa laser with an oxide window. The control-volume-based model provides spatial distributions of carrier density in the active region plane as well as electrical potential, current density and temperature distributions in the entire device. We focus our attention on current redistribution processes, and find out that the current crowding effect is strongly affected by the presence of oxide window. In addition to the geometry-related crowding, we describe the current self-distribution (CSD) effect related to spatially non-uniform stimulated recombination. The CSD is shown to counteract the spatial hole-burning caused by carrier consumption through intense stimulated emission.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vladimir A. Smagley, Vladimir A. Smagley, Gennady A. Smolyakov, Gennady A. Smolyakov, Petr Georgievich Eliseev, Petr Georgievich Eliseev, Marek Osinski, Marek Osinski, Andrzej J. Przekwas, Andrzej J. Przekwas, } "Current self-distribution effect in vertical-cavity surface-emitting semiconductor lasers", Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, (7 July 1998); doi: 10.1117/12.316681; https://doi.org/10.1117/12.316681
PROCEEDINGS
12 PAGES


SHARE
Back to Top