7 July 1998 Effects of native oxides and optical confinement on microactivity VCSEL spontaneous emission
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Abstract
Threshold currents in small-aperture VCSELs are likely to be dominated by diffraction losses. We have developed a semianalytic technique to estimate the lasing mode energies, field profiles and cavity losses--including absorption, mirror, and diffraction losses--in oxide-apertured VCSELs. By coupling these modes to the full, nonparabolic electronic bandstructure, and by solving the resulting multimode related rate equations, we can model the light versus current characteristics of microcavity VCSELs. We apply our model to a low-threshold VCSEL structure and calculate threshold currents of 30 - 40 (mu) A, in qualitative agreement with experiments. We estimate spontaneous emission factors (beta) as large as 1.7 X 10-2 for a 1.5 micrometers radius device.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John P. Loehr, John P. Loehr, Michael J. Noble, Michael J. Noble, James A. Lott, James A. Lott, } "Effects of native oxides and optical confinement on microactivity VCSEL spontaneous emission", Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, (7 July 1998); doi: 10.1117/12.316736; https://doi.org/10.1117/12.316736
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