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7 July 1998 Growth and doping of cubic GaN films for optoelectronic devices
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We discuss the conditions to be satisfied for the growth of cubic GaN films on GaAs(001) and Si(001) by plasma-assisted MBE. A stoichiometric group V/III flux ratio is required for single-phase growth, which is controlled via the surface reconstruction in real time by means of RHEED. While phase purity of cubic GaN-on-GaAs is induced by a well-defined orientation relationship, the growth on Si(001) often results in a phase transition due to the formation of amorphous SixNy inclusions at the GaN-on-Si interface, which act as nucleation centers for the growth of the hexagonal GaN phase. A suitable template, such as a thin GaAs or SiC insertion layer, prevents the formation of the SixNy inclusions. Cubic GaN grown under optimized conditions exhibit a narrow excitonic luminescence line at 3.272 eV at 5 K and high luminescence efficiency at room temperature. In addition, we discuss the origin of the n- type background doping in the as-grown layers and we present the new concept of codoping to achieve high p-type conductivity in GaN at room temperature.
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Klaus H. Ploog, Oliver Brandt, B. Yang, H. Yang, and Achim Trampert "Growth and doping of cubic GaN films for optoelectronic devices", Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, (7 July 1998);

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