7 July 1998 Modeling of wide-area thin-film metal-semiconductor-metal photodetectors for LIDAR applications
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Abstract
We report calculations of the collection current of interdigitated InGaAs metal-semiconductor-metal photodetectors. We show how interdigital spacing and thickness of the semiconductor layer influence the collection current. Both front and back illumination of devices carried on thin film membranes by means of epitaxial liftoff are examined.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andreas P. Glinz, Charles B. Morrison, Zheng Zhu, "Modeling of wide-area thin-film metal-semiconductor-metal photodetectors for LIDAR applications", Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, (7 July 1998); doi: 10.1117/12.316651; https://doi.org/10.1117/12.316651
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KEYWORDS
Electrodes

Semiconductors

Sensors

Electrons

Photodetectors

Indium gallium arsenide

Capacitance

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