7 July 1998 Nanoscale silicon for electroluminescent devices
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Abstract
Although porous silicon has received the most attention over the last 5 years, other structures containing Si nanocrystallites have recently been shown to emit strong luminescence at room temperature. This presentation reviews the state-of-the-art in the preparation and properties of silicon quantum dot structures, and their use in electroluminescent devices. The materials science and the structural, chemical, electrical, and optical properties of both porous silicon and recrystallized silicon superlattices are discussed. The fabrication of light-emitting devices consisting of these two types of nanoscale silicon materials is then described. Finally, the present and projected stability, efficiency, and speed of these LEDS is reviewed and their integration with silicon microelectronic driver circuits demonstrated.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Philippe M. Fauchet, Leonid Tsybeskov, "Nanoscale silicon for electroluminescent devices", Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, (7 July 1998); doi: 10.1117/12.316733; https://doi.org/10.1117/12.316733
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