7 July 1998 Operation of a novel hot-electron vertical-cavity surface-emitting laser
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Abstract
The hot Electron Light Emission and Lasing in Semiconductor Heterostructures devices (HELLISH-1) is novel surface emitter consisting of a GaAs quantum well, within the depletion region, on the n side of Ga1-xAlxAs p- n junction. It utilizes hot electron transport parallel to the layers and injection of hot electron hole pairs into the quantum well through a combination of mechanisms including tunnelling, thermionic emission and diffusion of `lucky' carriers. Super Radiant HELLISH-1 is an advanced structure incorporating a lower distributed Bragg reflector (DBR). Combined with the finite reflectivity of the upper semiconductor-air interface reflectivity it defines a quasi- resonant cavity enabling emission output from the top surface with a higher spectral purity. The output power has increased by two orders of magnitude and reduced the full width at half maximum (FWHM) to 20 nm. An upper DBR added to the structure defines HELLISH-VCSEL which is currently the first operational hot electron surface emitting laser and lases at room temperature with a 1.5 nm FWHM. In this work we demonstrate and compare the operation of UB-HELLISH-1 and HELLISH-VCSEL using experimental and theoretical reflectivity spectra over an extensive temperature range.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Naci Balkan, Naci Balkan, Angela O'Brien-Davies, Angela O'Brien-Davies, A. Boland Thoms, A. Boland Thoms, Richard J. Potter, Richard J. Potter, Nigel Poolton, Nigel Poolton, Michael J. Adams, Michael J. Adams, J. Masum, J. Masum, Alpan Bek, Alpan Bek, Ali Serpenguzel, Ali Serpenguzel, Atilla Aydinli, Atilla Aydinli, John Stuart Roberts, John Stuart Roberts, } "Operation of a novel hot-electron vertical-cavity surface-emitting laser", Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, (7 July 1998); doi: 10.1117/12.316680; https://doi.org/10.1117/12.316680
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