7 July 1998 Quantum-dot active regions for extended-wavelength-range GaAs-based light-emitting devices
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This paper describes crystal growth techniques for achieving good electroluminescence efficiency and narrow linewidth from a GaAs-based light emitting device emitting at 1.3 micrometers . The long wavelength emission is achieved using a quantum dot active region grown by sub-monolayer In, Ga and As. Low threshold lasing at a shorter wavelength of 1.15 micrometers is achieved in a GaAs-based oxide-confined vertical- cavity laser using alternating single monolayer growth of InAs/GaAs QDs.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Diana L. Huffaker, Jeremy D. Schaub, Hongyu Deng, Dennis G. Deppe, "Quantum-dot active regions for extended-wavelength-range GaAs-based light-emitting devices", Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, (7 July 1998); doi: 10.1117/12.316678; https://doi.org/10.1117/12.316678

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