7 July 1998 Quantum-dot active regions for extended-wavelength-range GaAs-based light-emitting devices
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This paper describes crystal growth techniques for achieving good electroluminescence efficiency and narrow linewidth from a GaAs-based light emitting device emitting at 1.3 micrometers . The long wavelength emission is achieved using a quantum dot active region grown by sub-monolayer In, Ga and As. Low threshold lasing at a shorter wavelength of 1.15 micrometers is achieved in a GaAs-based oxide-confined vertical- cavity laser using alternating single monolayer growth of InAs/GaAs QDs.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Diana L. Huffaker, Diana L. Huffaker, Jeremy D. Schaub, Jeremy D. Schaub, Hongyu Deng, Hongyu Deng, Dennis G. Deppe, Dennis G. Deppe, } "Quantum-dot active regions for extended-wavelength-range GaAs-based light-emitting devices", Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, (7 July 1998); doi: 10.1117/12.316678; https://doi.org/10.1117/12.316678

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