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7 July 1998 Role of nonequilibrium carrier distributions in multiple quantum well InGaAsP-based lasers
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Abstract
A microscopic model for the operation of multi-quantum well laser diodes is described. It includes bulk transport of carriers modeled by drift-diffusion equations, confined carriers in the quantum wells modeled by the Schroedinger equation, photon modes modeled by a Helmholtz equation and couplings described by rate equations. Application of this model shows that the carrier distribution in the active layer of the laser can not be described by quasi-equilibrium conditions. One consequence is the substantially non-uniform distribution of carriers among the quantum wells when the laser is biased above threshold. Another consequence is the observation of photoluminescence in wide area devices under short circuit conditions.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mark S. Hybertsen, Muhammad A. Alam, Gene A. Baraff, Anatoly A. Grinberg, and R. Kent Smith "Role of nonequilibrium carrier distributions in multiple quantum well InGaAsP-based lasers", Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, (7 July 1998); https://doi.org/10.1117/12.316671
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