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7 July 1998 Stimulated emission from GaAs quantum well microcavities: toward laser emission from a few excitons
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Abstract
We report experimental studies of laser emission from a microcavity embedded with inhomogeneously broadened GaAs quantum wells. Extremely small lasing threshold is observed when the cavity resonance is tuned to the low energy tail of the inhomogeneous exciton distribution. Detailed experimental studies further show that the excitation level at the minimum lasing threshold is below the exciton Mott density and that the lasing process changes qualitatively when the excitation level is increased from below to above the exciton Mott density. A preliminary analysis indicates that the small lasing threshold observed is due to the enhanced dipole coupling rate in the microcavity as well as the very small number of localization sites resonant with the cavity when the cavity is tuned to the low energy tail of the inhomogeneous exciton distribution. The results also suggest the possibility of achieving laser emission from a few or even a single localized exciton by using cavities with higher Q-factor and greater dipole coupling rate.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hailin Wang, Xudong Fan, Hong Q. Hou, and B. Eugene Hammons "Stimulated emission from GaAs quantum well microcavities: toward laser emission from a few excitons", Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, (7 July 1998); https://doi.org/10.1117/12.316686
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