7 July 1998 Structural analysis of prechirping InGaAsP bulk electroabsorption modulator considering the effective chirp parameter
Author Affiliations +
Abstract
We present the structural analysis of prechirping bulk electroabsorption modulators (EAM's) considering the effective chirp parameter ((alpha) eff). For an accurate estimation of (alpha) eff, we propose a novel method that uses the modulator output intensity as a weighting factor. The transmission characteristics using (alpha) eff obtained by the simple method have an excellent agreement with those obtained by a simulation using the dynamic small- signal chirp parameters. With this method, we perform the structural analysis of the prechirping InGaAsP bulk EAM's varying the device structures and operating conditions in terms of power penalty. From the simulation results, the relations between (alpha) eff and power penalty is found out for the InGaAsP bulk EAM's.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Byeong-Gee Kim, Young-Wan Choi, "Structural analysis of prechirping InGaAsP bulk electroabsorption modulator considering the effective chirp parameter", Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, (7 July 1998); doi: 10.1117/12.316653; https://doi.org/10.1117/12.316653
PROCEEDINGS
8 PAGES


SHARE
Back to Top