Temperature-induced alpha factor

Cun-Zheng Ning

doi:10.1117/12.316690

7 July 1998 Temperature-induced alpha factor

Cun-Zheng Ning

Proceedings Volume 3283, Physics and Simulation of Optoelectronic Devices VI; (1998) https://doi.org/10.1117/12.316690
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

We study the temperature effects on gain, refractive index, and the linewidth enhancement (or alpha) factor in a 2D semiconductor. We consider both the standard alpha factor due to carrier density variation and that due to temperature variation. The so-called total alpha factor due to both carrier density and temperature is also studied. As a result of temperature change, the alpha factors can be positive, negative, or zero.

Citation Download Citation

Cun-Zheng Ning "Temperature-induced alpha factor", Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, (7 July 1998); https://doi.org/10.1117/12.316690

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