7 July 1998 ZnSe-based light emitters grown on wide-gap III-V buffer layers
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ZnSe-based laser diodes have recently encountered strong competition from those grown from GaN related materials. These two material systems behave in a very different way as far as defect generation and propagation are concerned. For ZnSe-based materials the lifetime of a laser-diode is very sensitive to the density of pre-existing extended defects in the epitaxial material. Therefore, fabrication of a long- lived ZnSe-based laser diode requires an elimination of extended defects as well as making low-resistivity components in order to minimize device heating. We discuss the molecular beam epitaxy growth and characterization of ZnSe-based epitaxial structures on various III-V buffer layers lattice matched to GaAs. The status of our ZnSe-based laser diodes and microcavity LEDs will also be discussed.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Petteri Uusimaa, Petteri Uusimaa, Arto K. Salokatve, Arto K. Salokatve, Pekka Savolainen, Pekka Savolainen, A. Rinta-Moykky, A. Rinta-Moykky, Markus Pessa, Markus Pessa, A. Souifi, A. Souifi, R. Adhiri, R. Adhiri, George Kiriakidis, George Kiriakidis, K. Moschovis, K. Moschovis, J. Stoimenos, J. Stoimenos, "ZnSe-based light emitters grown on wide-gap III-V buffer layers", Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, (7 July 1998); doi: 10.1117/12.316674; https://doi.org/10.1117/12.316674


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