1.3-um InP-based n-type modulation-doped strained multiquantum well lasers for high-density parallel optical interconnections

Kouji Nakahara; Tomonobu Tsuchiya; A. Niwa; Kazuhisa Uomi; T. Haga; T. Taniwatari; T. Toyonaka

doi:10.1117/12.304440

7 April 1998 1.3-μm InP-based n-type modulation-doped strained multiquantum well lasers for high-density parallel optical interconnections

Kouji Nakahara, Tomonobu Tsuchiya, A. Niwa, Kazuhisa Uomi, T. Haga, T. Taniwatari, T. Toyonaka

Author Affiliations +

Proceedings Volume 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II; (1998) https://doi.org/10.1117/12.304440
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

The superior performance of n-type modulation doping in 1.3- micrometer InP-based strained multi quantum-well (MQW) lasers is demonstrated. Experimental results, which is in good agreement with theoretical results, confirm that the threshold current density, carrier lifetime, and internal loss in n-type modulation-doped (MD) MQW lasers is lower than those in conventional undoped MQW lasers at room and high temperatures. In addition, 2.5-Gb/s modulation under zero-bias current is achieved with the modified n-type MD-MQW laser at 85 degrees Celsius. These results confirm the suitability of this type of laser as a light source for high-density parallel optical interconnections.

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Kouji Nakahara, Tomonobu Tsuchiya, A. Niwa, Kazuhisa Uomi, T. Haga, T. Taniwatari, and T. Toyonaka "1.3-μm InP-based n-type modulation-doped strained multiquantum well lasers for high-density parallel optical interconnections", Proc. SPIE 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, (7 April 1998); https://doi.org/10.1117/12.304440

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