7 April 1998 Beam quality in multiwatt semiconductor amplifiers
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Abstract
Filamentation currently limits the amount of diffraction- limited power that can be obtained from broad-area semiconductor amplifiers. This paper examines the filamentation tendencies of a wide input-aperture tapered amplifier. Experimental measurements of filament gain under varying duty-cycle are offered and compared to theory. A numerical simulation of the device operation, which addresses non-uniform current injection, is also presented.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David J. Bossert, Gregory C. Dente, Michael L. Tilton, "Beam quality in multiwatt semiconductor amplifiers", Proc. SPIE 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, (7 April 1998); doi: 10.1117/12.304432; https://doi.org/10.1117/12.304432
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KEYWORDS
Optical amplifiers

Quantum wells

Semiconductors

Molybdenum

Amplifiers

Diffusion

Gallium arsenide

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