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7 April 1998 Buried heterostructure quantum cascade lasers
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Abstract
We report on the fabrication and characterization of buried heterostructure quantum cascade (BH-QC) lasers. The buried heterostructure is formed by regrowth of InP lateral on the side walls and on top of the InAlAs/InGaAs laser structure by molecular beam epitaxy (MBE) after in situ surface cleaning. Thermal Cl2 etching is applied to the etched laser structure to remove the native oxides of the ternaries prior to regrowth of InP. Buried heterostructure QC lasers demonstrated excellent performances with lower threshold current densities (as low as 4.5kA/cm2 at T equals 300K) and higher slope efficiencies that we attribute to lower waveguide losses and a better heat dissipation.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mattias Beck, Jerome Faist, Claire F. Gmachl, Federico Capasso, Deborah L. Sivco, James N. Baillargeon, and Alfred Y. Cho "Buried heterostructure quantum cascade lasers", Proc. SPIE 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, (7 April 1998); https://doi.org/10.1117/12.304449
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