Characterization of AlGaInN heterostructures and laser diodes

David P. Bour; Michael Kneissl; Noble M. Johnson; Linda T. Romano; Brent S. Krusor; Matt D. McCluskey; Werner Goetz; Ross D. Bringans

doi:10.1117/12.304435

7 April 1998 Characterization of AlGaInN heterostructures and laser diodes

David P. Bour, Michael Kneissl, Noble M. Johnson, Linda T. Romano, Brent S. Krusor, Matt D. McCluskey, Werner Goetz, Ross D. Bringans

Author Affiliations +

Proceedings Volume 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II; (1998) https://doi.org/10.1117/12.304435
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

We report on the OMVPE (organometallic vapor phase epitaxial) growth and characterization of AlGaInN heterostructures and laser diodes, including measurements of electrical properties (Hall), structural characteristics (x-ray diffraction and TEM), and room temperature, pulsed laser operation of a 10- quantum well InGaN/AlGaN heterostructure.

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David P. Bour, Michael Kneissl, Noble M. Johnson, Linda T. Romano, Brent S. Krusor, Matt D. McCluskey, Werner Goetz, and Ross D. Bringans "Characterization of AlGaInN heterostructures and laser diodes", Proc. SPIE 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, (7 April 1998); https://doi.org/10.1117/12.304435

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