7 April 1998 Gain and threshold current density characteristics of 2-μm GaInAsSb/AlGaAsSb MQW lasers with increased valence band offset
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Abstract
Compressively strained 2 micrometer GaInAsSb quantum well lasers with large valence band offsets and broadened waveguides display a record characteristic temperature, T0 equals 140 degrees Kelvin for a 4-QW laser and a differential efficiency of 0.74 for a pulsed 2-QW device. The T0 of these antimonide lasers is 65% more than that reported for phosphide-based lasers operating at 2 micrometer wavelength. A room-temperature threshold current density as low as 173 A/cm2 has been observed for a 2-QW device and 225 A/cm2 for the 4-QW laser.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tim C. Newell, Tim C. Newell, Luke F. Lester, Luke F. Lester, Xiaoying Wu, Xiaoying Wu, Yining Zhang, Yining Zhang, Allen L. Gray, Allen L. Gray, } "Gain and threshold current density characteristics of 2-μm GaInAsSb/AlGaAsSb MQW lasers with increased valence band offset", Proc. SPIE 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, (7 April 1998); doi: 10.1117/12.304452; https://doi.org/10.1117/12.304452
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