7 April 1998 High-power 1.5-μm tapered-gain-region lasers
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Abstract
Semiconductor lasers with tapered gain regions are well suited for applications requiring high output powers and good spatial mode quality. In this paper, the development of 1.5-micrometer InGaAsP/InP quantum well (QW) material suitable for this type of device will be discussed and initial results on high-power tapered lasers fabricated in this material presented. Several different 1.5-micrometer QW laser structures grown by metalorganic chemical vapor deposition are being evaluated. Structures containing three compressively strained QWs have shown transparency current densities JT as low as 170 A/cm2 and net gains of approximately equal 40 cm-1 at less than 800 A/cm2. With 5QWs, these parameters were JT approximately equals 275 A/cm2 and net gain approximately 40 cm-1 at 600 A/cm2, respectively. Self-focusing at high current densities and high intensity input into the taper section has been identified as a fundamental problem in these devices that has to be dealt with. Tapered devices with a 0.6-mm-long single-mode gain section coupled to a 1.4-mm-long tapered region fabricated in 5QW material have shown CW output powers of greater than 1.0 W at 3.8 A. Approximately 80% of the 1 W is in the near- diffraction-limited central lobe of the far field-pattern.
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Joseph P. Donnelly, James N. Walpole, Steven H. Groves, Robert J. Bailey, Leo J. Missaggia, Antonio Napoleone, R. E. Reeder, Christopher C. Cook, "High-power 1.5-μm tapered-gain-region lasers", Proc. SPIE 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, (7 April 1998); doi: 10.1117/12.304466; https://doi.org/10.1117/12.304466
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