7 April 1998 High-power 1.5-μm tapered-gain-region lasers
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Semiconductor lasers with tapered gain regions are well suited for applications requiring high output powers and good spatial mode quality. In this paper, the development of 1.5-micrometer InGaAsP/InP quantum well (QW) material suitable for this type of device will be discussed and initial results on high-power tapered lasers fabricated in this material presented. Several different 1.5-micrometer QW laser structures grown by metalorganic chemical vapor deposition are being evaluated. Structures containing three compressively strained QWs have shown transparency current densities JT as low as 170 A/cm2 and net gains of approximately equal 40 cm-1 at less than 800 A/cm2. With 5QWs, these parameters were JT approximately equals 275 A/cm2 and net gain approximately 40 cm-1 at 600 A/cm2, respectively. Self-focusing at high current densities and high intensity input into the taper section has been identified as a fundamental problem in these devices that has to be dealt with. Tapered devices with a 0.6-mm-long single-mode gain section coupled to a 1.4-mm-long tapered region fabricated in 5QW material have shown CW output powers of greater than 1.0 W at 3.8 A. Approximately 80% of the 1 W is in the near- diffraction-limited central lobe of the far field-pattern.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Joseph P. Donnelly, Joseph P. Donnelly, James N. Walpole, James N. Walpole, Steven H. Groves, Steven H. Groves, Robert J. Bailey, Robert J. Bailey, Leo J. Missaggia, Leo J. Missaggia, Antonio Napoleone, Antonio Napoleone, R. E. Reeder, R. E. Reeder, Christopher C. Cook, Christopher C. Cook, } "High-power 1.5-μm tapered-gain-region lasers", Proc. SPIE 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, (7 April 1998); doi: 10.1117/12.304466; https://doi.org/10.1117/12.304466


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