7 April 1998 High-power Al-free active-region diode lasers
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Abstract
Al-free InGaAsP/InGaP/GaAs-based diode lasers in the wavelength range 730 - 980 nm have been grown by metalorganic chemical vapor deposition (MOCVD). A large transverse spot size is obtained using a Broad Waveguide (BW) design, permitting record output powers to be obtained.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Luke J. Mawst, Jerome Kent Wade, A. Al-Muhanna, "High-power Al-free active-region diode lasers", Proc. SPIE 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, (7 April 1998); doi: 10.1117/12.304431; https://doi.org/10.1117/12.304431
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