7 April 1998 High-power broadened-waveguide InGaAsSb/AlGaAsSb quantum well diode lasers emitting at 2 μm
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Abstract
We review our recent progress in the design and operation of 2-micrometer InGaAsSb/AlGaAsSb quantum-well diode lasers. The devices have InGaAsSb quantum-well active regions and AlGaAsSb cladding layers, and all were grown lattice-matched to GaSb substrates using molecular-beam epitaxy. The broadened- waveguide (BW) design produces internal losses as low as 2 cm-1, which leads to external quantum efficiencies as high as 53%. Single-quantum-well lasers with 200-micrometer apertures and 2-mm-long cavities exhibit output powers of 1.9 W CW and 4 W quasi-CW. The lowest threshold current densities are 115 A/cm2. Small arrays of similar multi-quantum-well- diodes emit 10.6 W CW. The broadened-waveguide design should improve the performance of all mid-infrared diode lasers.
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Raymond J. Menna, Dmitri Z. Garbuzov, Hao Lee, Ramon U. Martinelli, S. Yegna Narayan, John C. Connolly, "High-power broadened-waveguide InGaAsSb/AlGaAsSb quantum well diode lasers emitting at 2 μm", Proc. SPIE 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, (7 April 1998); doi: 10.1117/12.304450; https://doi.org/10.1117/12.304450
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KEYWORDS
Semiconductor lasers

Continuous wave operation

Quantum wells

Waveguides

High power lasers

Cladding

Diodes

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