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7 April 1998 High-power broadened-waveguide InGaAsSb/AlGaAsSb quantum well diode lasers emitting at 2 μm
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We review our recent progress in the design and operation of 2-micrometer InGaAsSb/AlGaAsSb quantum-well diode lasers. The devices have InGaAsSb quantum-well active regions and AlGaAsSb cladding layers, and all were grown lattice-matched to GaSb substrates using molecular-beam epitaxy. The broadened- waveguide (BW) design produces internal losses as low as 2 cm-1, which leads to external quantum efficiencies as high as 53%. Single-quantum-well lasers with 200-micrometer apertures and 2-mm-long cavities exhibit output powers of 1.9 W CW and 4 W quasi-CW. The lowest threshold current densities are 115 A/cm2. Small arrays of similar multi-quantum-well- diodes emit 10.6 W CW. The broadened-waveguide design should improve the performance of all mid-infrared diode lasers.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Raymond J. Menna, Dmitri Z. Garbuzov, Hao Lee, Ramon U. Martinelli, S. Yegna Narayan, and John C. Connolly "High-power broadened-waveguide InGaAsSb/AlGaAsSb quantum well diode lasers emitting at 2 μm", Proc. SPIE 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, (7 April 1998);


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