7 April 1998 High-power optically pumped type-II quantum well lasers
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Abstract
Stimulated emission in InAs/InGaSb/InAs/AlSb type-II quantum- well (QW) lasers was observed up to room temperature at 4.5 micrometer, optically pumped by a pulsed 2-micrometer Tm:YAG laser. The absorbed threshold peak pump intensity was only 1.1 kW/cm2 at 300 K, with a characteristic temperature T0 of 61.6 K for temperatures up to 300 K. We have also studied another type-II QW laser using 0.808-micrometer pumping sources with a much longer pulse length of 50 microseconds. The devices demonstrated a maximum output power of 1.6 W per facet at 83 K, with a corresponding differential external quantum efficiency of 24.8%.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Donald L. McDaniel, Donald L. McDaniel, Charles E. Moeller, Charles E. Moeller, Michael Falcon, Michael Falcon, Stefan J. Murry, Stefan J. Murry, C.H. Thompson Lin, C.H. Thompson Lin, Rui Q. Yang, Rui Q. Yang, Shin Shem Pei, Shin Shem Pei, Donald M. Gianardi, Donald M. Gianardi, Chi Yan, Chi Yan, Andrew P. Ongstad, Andrew P. Ongstad, } "High-power optically pumped type-II quantum well lasers", Proc. SPIE 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, (7 April 1998); doi: 10.1117/12.304458; https://doi.org/10.1117/12.304458
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