InGaN/GaN double heterostructure laser with cleaved facets

Dean A. Stocker; E. Fred Schubert; W. Grieshaber; Karim S. Boutros; J. S. Flynn; Robert P. Vaudo; V. M. Phanse; Joan Marie Redwing

doi:10.1117/12.304461

7 April 1998 InGaN/GaN double heterostructure laser with cleaved facets

Dean A. Stocker, E. Fred Schubert, W. Grieshaber, Karim S. Boutros, J. S. Flynn, Robert P. Vaudo, V. M. Phanse, Joan Marie Redwing

Author Affiliations +

Proceedings Volume 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II; (1998) https://doi.org/10.1117/12.304461
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

Laser action is demonstrated in InGaN/GaN double heterostructures with cleaved facets. Hydride vapor phase epitaxy is used to grow a 10-micrometer-thick buffer layer of GaN on (0001) sapphire, and metal-organic vapor phase epitaxy is used to subsequently grow a GaN/In_0.09Ga_0.91N/GaN double heterostructure. One-mm-long cavities are produced by cleaving the structure along the (1010) plane of the sapphire substrate. A pulsed Nitrogen laser is used for optical excitation. At room temperature, the laser threshold occurs at an incident power density of 1.3 MW/cm². Above threshold, the differential quantum efficiency increases by a factor of 34, the emission linewidth decreases to 13.5 meV, and the output becomes highly TE polarized.

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Dean A. Stocker, E. Fred Schubert, W. Grieshaber, Karim S. Boutros, J. S. Flynn, Robert P. Vaudo, V. M. Phanse, and Joan Marie Redwing "InGaN/GaN double heterostructure laser with cleaved facets", Proc. SPIE 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, (7 April 1998); https://doi.org/10.1117/12.304461

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