7 April 1998 InGaN/GaN lasers grown on SiC
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Abstract
Single crystal thin films with compositions from the AlN-InN- GaN system were grown via metal-organic chemical vapor deposition (MOCVD) on single crystal 6H-SiC substrates. Blue light emitting (LED) and laser diode (LD) structures were fabricated. A conducting buffer layer was developed which uses an AlGaN buffer layer which provides a conduction path between SiC and the active device region. This conducting buffer layer was utilized in both the LEDs and the LDs. The external quantum efficiency of the LEDs was 3% at 20 mA (3.6V) with a peak emission wavelength of 430 nm. Violet and blue LDs were fabricated which consisted of an 8-well InGaN/GaN multiple quantum well (MQW) active region in a separate confinement heterostructure (SCH) design. The devices lased at room temperature under pulsed and continuous wave operation with an emission wavelength of 404-435 nm. The lowest pulsed operation threshold current density obtained for lasing under was 10.4 kA/cm2.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kathy Doverspike, Gary E. Bulman, S. T. Sheppard, Hua-Shuang Kong, Michelle T. Leonard, Heidi Dieringer, John A. Edmond, K. L. More, Y. K. Song, M. Kuball, Arto V. Nurmikko, "InGaN/GaN lasers grown on SiC", Proc. SPIE 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, (7 April 1998); doi: 10.1117/12.304434; https://doi.org/10.1117/12.304434
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