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7 April 1998 Inapplicability of a simply parameterized threshold current in Sb-based IR lasers
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We examine theoretically the influence of temperature and composition on the threshold current densities of mid-wave infrared lasers with active regions consisting of InAs/InGaSb superlattices. Temperature shifts of the bands may result in significant variations in intersubband absorption and Auger recombination rates, giving rise to a threshold current density that is not well parameterized by a characteristic temperature T0. Superlattices that are optimized to have minimal threshold current densities are shown to require plus or minus 3.5 angstrom accuracy in InGaSb layer thicknesses, and plus or minus 0.25 angstrom accuracy in InAs layer thickness in order to retain optimum operating characteristics.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christoph H. Grein, Michael E. Flatte, and Henry Ehrenreich "Inapplicability of a simply parameterized threshold current in Sb-based IR lasers", Proc. SPIE 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, (7 April 1998); doi: 10.1117/12.304459;


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