Low-threshold high-power high-brightness GaInAsSb/AlGaAsSb quantum well lasers emitting at 2.05 um

Hong K. Choi; George W. Turner; James N. Walpole; M. J. Manfra; M. K. Connors; Leo J. Missaggia

doi:10.1117/12.304462

7 April 1998 Low-threshold high-power high-brightness GaInAsSb/AlGaAsSb quantum well lasers emitting at 2.05 μm

Hong K. Choi, George W. Turner, James N. Walpole, M. J. Manfra, M. K. Connors, Leo J. Missaggia

Proceedings Volume 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II; (1998) https://doi.org/10.1117/12.304462
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

Strained single-quantum-well GaInAsSb/AlGaAsSb diode lasers have exhibited room-temperature threshold current densities as low as 50 A/cm², one of the lowest values reported for diode lasers at room temperature. These lasers, grown by molecular beam epitaxy, have emission wavelengths of approximately 2.05 micrometers, characteristic temperature of 65 K, internal quantum efficiency of 95%, and internal loss coefficient of 7 cm^-1. Single-ended cw power of 1 W is obtained for a 100-micrometer-wide broad-stripe laser. Tapered lasers with a 140-micrometer aperture have exhibited diffraction-limited cw power up to 600 mW.

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Hong K. Choi, George W. Turner, James N. Walpole, M. J. Manfra, M. K. Connors, and Leo J. Missaggia "Low-threshold high-power high-brightness GaInAsSb/AlGaAsSb quantum well lasers emitting at 2.05 μm", Proc. SPIE 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, (7 April 1998); https://doi.org/10.1117/12.304462

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