7 April 1998 Mid-infrared GaSb-InAs-based multiple quantum well lasers
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We report GaInAsSb/GaSb multiple quantum well lasers with type-II band alignment operating at room temperature. Basic properties of GaInAsSb/GaSb system in presence of strains are presented. Room temperature lasing has been achieved at wavelengths up to 2.65 micrometer. For the first time, stimulated emission has been obtained from a type-III quantum well structure at room temperature at 1.98 micrometer and 2.32 micrometer for the structures with 6- and 12-angstrom-thick InAs quantum wells, respectively. Modification of the band structure near interfaces of the type-II quantum wells due to carrier injection is shown to be a decisive factor allowing to obtain low threshold lasing in quantum well structures with indirect radiative recombination.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexei N. Baranov, Alexei N. Baranov, N. Bertru, N. Bertru, Y. Cuminal, Y. Cuminal, G. Boissier, G. Boissier, Y. Rouillard, Y. Rouillard, J. C. Nicolas, J. C. Nicolas, P. Grech, P. Grech, Andre Francis Joullie, Andre Francis Joullie, Claude L. Alibert, Claude L. Alibert, } "Mid-infrared GaSb-InAs-based multiple quantum well lasers", Proc. SPIE 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, (7 April 1998); doi: 10.1117/12.304451; https://doi.org/10.1117/12.304451

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