7 April 1998 Modulated-cap thin p-clad antiguided array lasers
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Abstract
Antiguided array lasers were fabricated in thin p-clad, InGaAs/GaAs single quantum well material. The required lateral refractive index variation was achieved by precisely modulating the thickness of the GaAs cap layer using a novel pulsed anodization/etching technique. Edge emitting arrays have 5 lasers on 9.5 micrometer centers with 6 micrometer wide gain regions and arrays having 20 lasers on 7 micrometer centers with 5 micrometer wide gain regions were characterized. At 1.2 times the pulsed current threshold (Ith), the central lobe of the lateral far field of the 5 element arrays contained about 55% of the beam power and were nearly diffraction limited (FWHM equals 1.3 degrees). At 1.2 Ith, the central lobe of the 20 element arrays contained about 75% of the beam power and were about twice the diffraction limit (FWHM) equals 0.8 degrees). At 10 Ith, the central lobe of the 20 element arrays contained about 60% of the beam power and were about 1.6 degrees wide.
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Jeong Seok O, Peter S. Zory, Carl F. Miester, John Yoon, Mark A. Emanuel, Verry Sperry, Bradley D. Schwartz, Richard S. Setzko, "Modulated-cap thin p-clad antiguided array lasers", Proc. SPIE 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, (7 April 1998); doi: 10.1117/12.304464; https://doi.org/10.1117/12.304464
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KEYWORDS
Modulation

Refractive index

Diffraction

Etching

Information operations

Quantum wells

Silicon

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