7 April 1998 Pulsed operation of (Al,Ga,In)N blue laser diodes
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Room temperature (RT) pulsed operation of blue (420 nm) nitride based multi-quantum well (MQW) laser diodes grown on a-plane and c-plane sapphire substrates has been demonstrated. A combination of atmospheric and low pressure metal organic chemical vapor deposition (MOCVD) using a modified two-flow horizontal reactor was employed. The emission is strongly TE polarized and has a sharp transition in the far field pattern above threshold. Threshold current densities as low as 12.6 kA/cm2 were observed for 10 X 1200 micrometer lasers with uncoated reactive ion etched (RIE) facets on c-plane sapphire. Cleaved facet lasers were also demonstrated with similar performance on a-plane sapphire. Differential efficiencies as high as 7% and output powers up to 77 mW were observed. Laser diodes tested under pulsed conditions operated up to 6 hours at room temperature. Performance was limited by resistive heating during the electrical pulses. Lasing was achieved up to 95 degrees Celsius and up to a 150 ns pulse length (RT). Threshold current increased with temperature with a characteristic temperature, T0, of 125 K.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Amber C. Abare, Amber C. Abare, Michael P. Mack, Michael P. Mack, Mark W. Hansen, Mark W. Hansen, R. Kehl Sink, R. Kehl Sink, Peter Kozodoy, Peter Kozodoy, Sarah L. Keller, Sarah L. Keller, Evelyn L. Hu, Evelyn L. Hu, James S. Speck, James S. Speck, John Edward Bowers, John Edward Bowers, Umesh K. Mishra, Umesh K. Mishra, Larry A. Coldren, Larry A. Coldren, Steven P. DenBaars, Steven P. DenBaars, "Pulsed operation of (Al,Ga,In)N blue laser diodes", Proc. SPIE 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, (7 April 1998); doi: 10.1117/12.304436; https://doi.org/10.1117/12.304436


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