7 April 1998 Real-index-guided AlGaInP red laser with high-power characteristics grown by one-step MOVPE
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Abstract
We have developed a one-step-grown real-index-guided AlGaInP/GaInAsP red laser called a self-aligned stepped substrate (S3) laser. This S3-laser has a double- hetero structure formed on a stepped nonplanar substrate and an active layer inclined at an angle to the horizontal. The fabrication process of the laser utilizes the following two key techniques: (1) a lateral p-n junction formed during the growth of the nonplanar substrate by alternate doping with Zn and Se that have strong impurity incorporation dependencies on the substrate's orientation, and (2) a natural (411)A-like growth facet formation on the nonplanar substrate by metal organic vapor phase epitaxy (MOVPE). The real-index waveguide structure with an inclined active layer provided the laser with a stable lateral-mode and good beam characteristics (a small astigmatism and a small aspect ratio). Its optical-loss- free structure leads to a low threshold current of about 20 mA, a high quantum efficiency of about 1.2 W/A, and a high characteristic temperature of about 150K within 25 degrees Celsius to 50 degrees Celsius. A low operating current of the laser with the wavelength of 680 nm under 70 degrees Celsius, 35 mW conditions, would make it highly reliable for optical storage applications.
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Chikashi Anayama, Chikashi Anayama, Akira Furuya, Akira Furuya, Toshiyuki Tanahashi, Toshiyuki Tanahashi, } "Real-index-guided AlGaInP red laser with high-power characteristics grown by one-step MOVPE", Proc. SPIE 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, (7 April 1998); doi: 10.1117/12.304438; https://doi.org/10.1117/12.304438
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