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7 April 1998 Type-II quantum cascade lasers
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Abstract
Recently, we demonstrated a new type of quantum cascade lasers based on interband transitions in type-II heterostructures. It takes advantage of the broken-gap band alignment in the InAs/Ga(In)Sb heterostructure to recycle electrons from the valence band back to the conduction band, thus enabling sequential photon emission from active regions stacked in series. A peak optical output power of approximately 0.5 W/facet from a broad area gain-guided interband cascade laser with a threshold current density of 290 A/cm2, and a slope of 211 mW/A per facet, corresponding to a differential external quantum efficiency of 131%, were obtained at 80 K and at a wavelength of approximately 3.9 micrometer. Differential quantum efficiencies exceeding 200% were also observed from mesa structure lasers. Comparable device performance was also achieved based on a 'W' configuration cascade laser at approximately 2.9 micrometer, which has been operated at temperatures up to 225 K. Another W interband cascade laser has displayed lasing at 3.6 micrometer and nearly to room temperature (286 K).
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rui Q. Yang, C.H. Thompson Lin, Bao Hua Yang, Dongxu Zhang, Stefan J. Murry, Shin Shem Pei, William W. Bewley, Linda J. Olafsen, Edward H. Aifer, Christopher L. Felix, Igor Vurgaftman, and Jerry R. Meyer "Type-II quantum cascade lasers", Proc. SPIE 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, (7 April 1998); https://doi.org/10.1117/12.304455
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