4 May 1998 Epitaxial growth of n- and p-type ZnCdSe layers and light-emitting diodes
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Abstract
Zn0.48Cd0.52Se layers were grown on InP substrates by molecular-beam epitaxy. The n-type carrier concentration was controlled from 3X1016 cm-3 to 7X1018 cm-3 through the ZnCl2 source cell temperature. Nitrogen doping was performed using a radio-frequency plasma. Capacitance-voltage measurement showed that the ZnCdSe:N layer was p-type with a net acceptor concentration (Na-Nd) of 3.5X1016 cm-3. ZnCdSe p-n homojunction light- emitting diodes (LEDs) was fabricated. Orange luminescence intensity peaking at a wavelength of 590 nm was observed at room temperature. Double-heterostructure LEDs with a ZnSeTe contact layer were also fabricated and a higher luminescence intensity than in the homojunction LEDs was observed. The operating voltage ranged from 15 to 20 volts.
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Hiroshi Iwata, Koichi Naniwae, Kenichiro Yashiki, "Epitaxial growth of n- and p-type ZnCdSe layers and light-emitting diodes", Proc. SPIE 3285, Fabrication, Testing, Reliability, and Applications of Semiconductor Lasers III, (4 May 1998); doi: 10.1117/12.307611; https://doi.org/10.1117/12.307611
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