4 May 1998 Theoretical analysis of high-speed modulation of semiconductor lasers by electron heating
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Abstract
In Electron Heating Modulation, a microwave field is applied to the active region of a semiconductor laser to change the electron temperature, and thereby to indirectly change the optical transition and to achieve high speed modulation. A detailed theoretical model by including the electron temperature has been developed to investigate this modulation scheme, and to identify the principal difference and limitations in comparison with the traditional scheme, Current Injection Modulation. Optical gain peaks for various electron temperature are calculated. Small signal analysis reveals that a semiconductor laser can be modulated beyond 50 GHz by electron heating, a few times higher than that by Current Injection Modulation. However, this benefit is not retained in large signal operation. In fact, in large signal simulation the modulation bandwidth by both schemes are shown to be similar, at 16 GHz. In view of the fact that the modulation bandwidth of conventional method is limited by the spontaneous recombination time, a method combining the Electron Heating Modulation and the Current Injection Modulation, is an intriguing alternative. Large signal simulations shows that there are some merit to this combined method.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chung Y. Wu, Chung Y. Wu, Chang-Zhi Guo, Chang-Zhi Guo, Jing Ming Xu, Jing Ming Xu, } "Theoretical analysis of high-speed modulation of semiconductor lasers by electron heating", Proc. SPIE 3285, Fabrication, Testing, Reliability, and Applications of Semiconductor Lasers III, (4 May 1998); doi: 10.1117/12.307607; https://doi.org/10.1117/12.307607
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