20 April 1998 Progress in GaInNAs/GaAs long-wavelength vertical-cavity surface-emitting lasers
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Abstract
GaInNAs is a novel laser diode active layer material which holds great promise for low-cost optical fiber transmission applications requiring emission wavelengths near 1.3 micrometers . GaInNAs permits the realization of a long-wavelength vertical-cavity laser grown directly on a GaAs substrate. Continuous-wave room-temperature photo-pumped laser oscillation has been demonstrated in vertical cavity laser designs employing single or multiple GaInNAs quantum wells, with lasing wavelengths as long as 1.256 micrometers . Electrically-injected devices have achieved pulsed operation at room temperature and above, with a minimum threshold current density of 3.1 kA/cm2, slope efficiency above 0.04 W/A, and output power above 5 mW for 45 micrometers -diameter devices. Threshold current has exhibited minimal dependence on temperature from 20 degrees C to 60 degrees C, and laser oscillation is observed for temperatures as high as 95 degrees C.
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Michael C. Larson, Masahiko Kondow, Takeshi Kitatani, Kouji Nakahara, K. Tamura, Yoshiaki Yazawa, Makoto O. Okai, Hiroaki Inoue, Kazuhisa Uomi, "Progress in GaInNAs/GaAs long-wavelength vertical-cavity surface-emitting lasers", Proc. SPIE 3286, Vertical-Cavity Surface-Emitting Lasers II, (20 April 1998); doi: 10.1117/12.305466; https://doi.org/10.1117/12.305466
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