20 April 1998 Progress in GaInNAs/GaAs long-wavelength vertical-cavity surface-emitting lasers
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Abstract
GaInNAs is a novel laser diode active layer material which holds great promise for low-cost optical fiber transmission applications requiring emission wavelengths near 1.3 micrometers . GaInNAs permits the realization of a long-wavelength vertical-cavity laser grown directly on a GaAs substrate. Continuous-wave room-temperature photo-pumped laser oscillation has been demonstrated in vertical cavity laser designs employing single or multiple GaInNAs quantum wells, with lasing wavelengths as long as 1.256 micrometers . Electrically-injected devices have achieved pulsed operation at room temperature and above, with a minimum threshold current density of 3.1 kA/cm2, slope efficiency above 0.04 W/A, and output power above 5 mW for 45 micrometers -diameter devices. Threshold current has exhibited minimal dependence on temperature from 20 degrees C to 60 degrees C, and laser oscillation is observed for temperatures as high as 95 degrees C.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael C. Larson, Michael C. Larson, Masahiko Kondow, Masahiko Kondow, Takeshi Kitatani, Takeshi Kitatani, Kouji Nakahara, Kouji Nakahara, K. Tamura, K. Tamura, Yoshiaki Yazawa, Yoshiaki Yazawa, Makoto O. Okai, Makoto O. Okai, Hiroaki Inoue, Hiroaki Inoue, Kazuhisa Uomi, Kazuhisa Uomi, "Progress in GaInNAs/GaAs long-wavelength vertical-cavity surface-emitting lasers", Proc. SPIE 3286, Vertical-Cavity Surface-Emitting Lasers II, (20 April 1998); doi: 10.1117/12.305466; https://doi.org/10.1117/12.305466
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