PROCEEDINGS VOLUME 3287
OPTOELECTRONICS AND HIGH-POWER LASERS AND APPLICATIONS | 24-30 JANUARY 1998
Photodetectors: Materials and Devices III
Editor(s): Gail J. Brown
OPTOELECTRONICS AND HIGH-POWER LASERS AND APPLICATIONS
24-30 January 1998
San Jose, CA, United States
Infrared Detectors and Materials I
Proc. SPIE 3287, Narrow-gap semiconductor photodiodes, 0000 (8 April 1998); https://doi.org/10.1117/12.304467
Proc. SPIE 3287, InAs/Ga1-xInxSb infrared superlattice photodiodes for infrared detection, 0000 (8 April 1998); https://doi.org/10.1117/12.304477
Proc. SPIE 3287, Mid-infrared photodetectors based on the InAs/InGaSb type-II superlattices, 0000 (8 April 1998); https://doi.org/10.1117/12.304487
Proc. SPIE 3287, Growth and characterization of InAs/GaSb type-II superlattice for long-wavelength infrared detectors, 0000 (8 April 1998); https://doi.org/10.1117/12.304497
High-Speed Photodetectors for Optoelectronics
Proc. SPIE 3287, Wide-area thin film metal-semiconductor-metal photodetectors for lidar applications, 0000 (8 April 1998); https://doi.org/10.1117/12.304501
Proc. SPIE 3287, Ionization coefficient measurements in InP by using multiplication noise characteristics of InP/InGaAs separate absorption, grading, charge, and multiplication (SAGCM) avalanche photodiodes (APDs), 0000 (8 April 1998); https://doi.org/10.1117/12.304505
Proc. SPIE 3287, Photoelectric performance degradation of several laser-irradiated Si detectors, 0000 (8 April 1998); https://doi.org/10.1117/12.304506
Proc. SPIE 3287, Ultrafast electronic processes in CVD diamonds and GaAs: picosecond photoconductivity and high-voltage switching, 0000 (8 April 1998); https://doi.org/10.1117/12.304507
Quantum Well Infrared Photodetectors I
Proc. SPIE 3287, Strain-compensated InGaAs/AlGaAsP quantum well intersubband photodetectors for mid-IR wavelengths, 0000 (8 April 1998); https://doi.org/10.1117/12.304468
Proc. SPIE 3287, Large bandgap shift in InGaAs(P)/InP multi-quantum well structure obtained by impurity-free vacancy diffusion using SiO2 capping and its application to photodetectors, 0000 (8 April 1998); https://doi.org/10.1117/12.304469
Proc. SPIE 3287, Responsivity and noise performance of InGaAs/InP quantum well infrared photodetectors, 0000 (8 April 1998); https://doi.org/10.1117/12.304470
Proc. SPIE 3287, Impurity-free intermixing of InGaAs/GaAs-strained multiple quantum well infrared photodetectors, 0000 (8 April 1998); https://doi.org/10.1117/12.304471
Proc. SPIE 3287, The Bi/Bi1-xSbx multiquantum well structure, 0000 (8 April 1998); https://doi.org/10.1117/12.304472
Quantum Well Infrared Photodetectors II
Proc. SPIE 3287, Corrugated QWIP array fabrication and characterization, 0000 (8 April 1998); https://doi.org/10.1117/12.304473
Proc. SPIE 3287, Recent progress in GaInAsSb and InAsSbP photodetectors for mid-infrared wavelengths, 0000 (8 April 1998); https://doi.org/10.1117/12.304474
Proc. SPIE 3287, Silicon JFETs for cryogenic applications, 0000 (8 April 1998); https://doi.org/10.1117/12.304475
Quantum Wells and Quantum Dots
Proc. SPIE 3287, Ballistic electron emission microscopy (BEEM) of novel semiconductor heterostructures and quantum dots, 0000 (8 April 1998); https://doi.org/10.1117/12.304476
Proc. SPIE 3287, P-type quantum well infrared photodetectors and pixelless long-wavelength infrared imaging devices, 0000 (8 April 1998); https://doi.org/10.1117/12.304478
Proc. SPIE 3287, Noise and photoconductivity in single quantum well infrared photodetectors, 0000 (8 April 1998); https://doi.org/10.1117/12.304479
Proc. SPIE 3287, Comparison of the dark current from an AlGaAs/GaAs and AlGaN/GaN quantum well, 0000 (8 April 1998); https://doi.org/10.1117/12.304480
Photodiodes for Ultraviolet Detection
Proc. SPIE 3287, GaN/AlGaN UV photodiodes and phototransistors, 0000 (8 April 1998); https://doi.org/10.1117/12.304481
Proc. SPIE 3287, Megahertz bandwidth AlxGa1-xN/GaN-based p-i-n detectors, 0000 (8 April 1998); https://doi.org/10.1117/12.304482
Proc. SPIE 3287, Comparison of GaN Schottky barrier and p-n junction photodiodes, 0000 (8 April 1998); https://doi.org/10.1117/12.304483
Proc. SPIE 3287, GaN p-i-n photodiodes with high visible-to-ultraviolet rejection ratio, 0000 (8 April 1998); https://doi.org/10.1117/12.304484
Infrared Detectors and Materials II
Proc. SPIE 3287, Computational materials science: an increasingly reliable engineering tool (example: defects in HgCdTe alloys), 0000 (8 April 1998); https://doi.org/10.1117/12.304485
Proc. SPIE 3287, Epitaxial structures for reduced cooling of high-performance infrared detectors, 0000 (8 April 1998); https://doi.org/10.1117/12.304486
Proc. SPIE 3287, Strain effects in CdTe(111) layers on tilted Si(100) substrate by MBE, 0000 (8 April 1998); https://doi.org/10.1117/12.304488
Proc. SPIE 3287, Novel InTlSb and InSbBi alloys for uncooled photodetector applications, 0000 (8 April 1998); https://doi.org/10.1117/12.304489
Far-Infrared Detectors
Proc. SPIE 3287, Photoconductor arrays for a spectral-photometric far-infrared camera on SOFIA, 0000 (8 April 1998); https://doi.org/10.1117/12.304490
Proc. SPIE 3287, High-performance GaAs homojunction far-infrared detectors, 0000 (8 April 1998); https://doi.org/10.1117/12.304491
Poster Session
Proc. SPIE 3287, Possibility of the development of vicinal superlattices in quantum wires on semiconductor low-index surfaces, 0000 (8 April 1998); https://doi.org/10.1117/12.304493
Proc. SPIE 3287, Selective formation of InxGa1-xAs quantum dots by molecular beam epitaxy, 0000 (8 April 1998); https://doi.org/10.1117/12.304494
Proc. SPIE 3287, Photocurrent decay transient process in a Si1-xGex/Si superlattice, 0000 (8 April 1998); https://doi.org/10.1117/12.304495
Proc. SPIE 3287, Electrical transport properties of highly doped N-type GaN epilayers, 0000 (8 April 1998); https://doi.org/10.1117/12.304496
Proc. SPIE 3287, RF magnetron sputtering deposition of CdTe passivation on HgCdTe, 0000 (8 April 1998); https://doi.org/10.1117/12.304498
Proc. SPIE 3287, Extended dynamical range solid state photon counter, 0000 (8 April 1998); https://doi.org/10.1117/12.304499
Proc. SPIE 3287, RF bias effects on properties of hydrogenated amorphous silicon deposited by electron cyclotron resonance plasma-enchanced chemical vapor deposition, 0000 (8 April 1998); https://doi.org/10.1117/12.304500
Proc. SPIE 3287, Photoresist microparabolas for beam steering, 0000 (8 April 1998); https://doi.org/10.1117/12.304502
Photodiodes for Ultraviolet Detection
Proc. SPIE 3287, Breakdown mechanisms in Al(GaN) MSM photodetectors, 0000 (8 April 1998); https://doi.org/10.1117/12.304503
Quantum Well Infrared Photodetectors II
Proc. SPIE 3287, Recent progress in quantum well infrared photodetector research and development at Jet Propulsion Lab., 0000 (8 April 1998); https://doi.org/10.1117/12.304504
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