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Growth and characterization of InAs/GaSb type-II superlattice for long-wavelength infrared detectors
Ionization coefficient measurements in InP by using multiplication noise characteristics of InP/InGaAs separate absorption, grading, charge, and multiplication (SAGCM) avalanche photodiodes (APDs)
Ultrafast electronic processes in CVD diamonds and GaAs: picosecond photoconductivity and high-voltage switching
Large bandgap shift in InGaAs(P)/InP multi-quantum well structure obtained by impurity-free vacancy diffusion using SiO2 capping and its application to photodetectors
Ballistic electron emission microscopy (BEEM) of novel semiconductor heterostructures and quantum dots
Computational materials science: an increasingly reliable engineering tool (example: defects in HgCdTe alloys)
Possibility of the development of vicinal superlattices in quantum wires on semiconductor low-index surfaces
RF bias effects on properties of hydrogenated amorphous silicon deposited by electron cyclotron resonance plasma-enchanced chemical vapor deposition
Recent progress in quantum well infrared photodetector research and development at Jet Propulsion Lab.