Breakdown mechanisms in Al(GaN) MSM photodetectors

Ian T. Ferguson; Matthew J. Schurman; Robert F. Karlicek Jr.; Zhe Chuan Feng; S. Lianga; Yicheng Lu; Charles L. Joseph

doi:10.1117/12.304503

8 April 1998 Breakdown mechanisms in Al(GaN) MSM photodetectors

Ian T. Ferguson, Matthew J. Schurman, Robert F. Karlicek Jr., Zhe Chuan Feng, S. Lianga, Yicheng Lu, Charles L. Joseph

Proceedings Volume 3287, Photodetectors: Materials and Devices III; (1998) https://doi.org/10.1117/12.304503
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

AlGaN based interdigital metal-semiconductor-metal (MSM) photodetectors with 14 percent Al have been successfully grown and fabricate don sapphire substrates. The devices exhibit large gains up to 10⁶ at high bias voltages, but with very high dark currents, > 1 mA and very long detector responses, > 60 seconds. A negative temperature coefficient for the breakdown voltage was observed indicating that tunneling is occurring. However, at high bias voltages, avalanche breakdown also appears to be present since a constant breakdown field of 10⁵ V/cm was obtained independent of MSM geometry. Avalanche breakdown is nucleated at the non-uniform field distribution at the edge of the MSM finger.

Citation Download Citation

Ian T. Ferguson, Matthew J. Schurman, Robert F. Karlicek Jr., Zhe Chuan Feng, S. Lianga, Yicheng Lu, and Charles L. Joseph "Breakdown mechanisms in Al(GaN) MSM photodetectors", Proc. SPIE 3287, Photodetectors: Materials and Devices III, (8 April 1998); https://doi.org/10.1117/12.304503

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