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8 April 1998 Epitaxial structures for reduced cooling of high-performance infrared detectors
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Abstract
IR detectors are normally cooled to 80K or below to obtain the highest, background limited performance. We present results for indium antimonide/indium aluminium antimonide and mercury cadmium telluride detectors grown by epitaxial processes in order to facilitate high performance with reduced cooling requirements. The epitaxial growth enables structures to be grown which offer precise control of carrier generation and current leakage mechanisms so that the maximum temperature can be achieve din a photodiode operated in a conventional manner, near zero bias. These types of structure offer even greater operating temperature when reverse biased to suppress non-radiative generation mechanisms. The epitaxial growth also has advantages for conventional, 80K operation, which are described.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tim Ashley and Neil T. Gordon "Epitaxial structures for reduced cooling of high-performance infrared detectors", Proc. SPIE 3287, Photodetectors: Materials and Devices III, (8 April 1998); https://doi.org/10.1117/12.304486
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