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8 April 1998 GaN/AlGaN UV photodiodes and phototransistors
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Abstract
Using MOCVD grown GaN and AlGaN alloys and heterostructures, we realized heterojunction UV photodiodes and phototransistors. We achieved photovoltaic internal quantum efficiency in excess of 90 percent and large UV-visible rejection ratio in the GaN/AlGaN PIN photodiodes. The results indicate high quality heterojunction interface and efficient carrier collection. We demonstrated an n-p-i-n GaN/AlGaN heterojunction bipolar phototransistor with gain in excess of 105, and 360 nm to 400 nm rejection ratio of 108. The phototransistor features a rapid electrical quenching of photoconductivity therefore can be operated without DC drift, an option not available in unipolar photoconductors. The electrical bandwidth of the phototransistor can be changed to accommodate particular applications by simply adjusting the repetition rate of the quenching pulses. The operation and evaluation of these devices are compared with alternative devices including SiC photodiode and GaN photoconductors.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wei Yang, Thomas Nohava, S. Krishnankutty, Robert Torreano, Scott A. McPherson, and Holly A. Marsh "GaN/AlGaN UV photodiodes and phototransistors", Proc. SPIE 3287, Photodetectors: Materials and Devices III, (8 April 1998); https://doi.org/10.1117/12.304481
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