8 April 1998 Growth and characterization of InAs/GaSb type-II superlattice for long-wavelength infrared detectors
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Abstract
We report the molecular beam epitaxial growth and characterization of InAs/GaSb superlattices grown on semi- insulating GaAs substrate for long wavelength IR detectors. Photoconductive detectors fabricated from the superlattices showed 80 percent cut-off at 11.6 micrometers and peak responsivity of 6.5 V/W with Johnson noise limited detectivity of 2.36 X 109 cmHz1/2/W at 10.7 micrometers at 78 K. The responsivity decreases at higher temperatures with a T-2 behavior rather than exponential decay, and at room temperature the responsivity is about 660 mV/W at 11 micrometers . Lower Auger recombination rate in this system provides comparable detectivity to the best HgCdTe detectors at 300K. Higher uniformity over large areas, simpler growth and the possibility of having read-out circuits in the same GaAs chip are the advantages of this system over HgCdTe detectors for near room temperature operation.
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Hooman Mohseni, Hooman Mohseni, Erick J. Michel, Erick J. Michel, Manijeh Razeghi, Manijeh Razeghi, W. C. Mitchel, W. C. Mitchel, Gail J. Brown, Gail J. Brown, } "Growth and characterization of InAs/GaSb type-II superlattice for long-wavelength infrared detectors", Proc. SPIE 3287, Photodetectors: Materials and Devices III, (8 April 1998); doi: 10.1117/12.304497; https://doi.org/10.1117/12.304497
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