8 April 1998 Growth and characterization of InAs/GaSb type-II superlattice for long-wavelength infrared detectors
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We report the molecular beam epitaxial growth and characterization of InAs/GaSb superlattices grown on semi- insulating GaAs substrate for long wavelength IR detectors. Photoconductive detectors fabricated from the superlattices showed 80 percent cut-off at 11.6 micrometers and peak responsivity of 6.5 V/W with Johnson noise limited detectivity of 2.36 X 109 cmHz1/2/W at 10.7 micrometers at 78 K. The responsivity decreases at higher temperatures with a T-2 behavior rather than exponential decay, and at room temperature the responsivity is about 660 mV/W at 11 micrometers . Lower Auger recombination rate in this system provides comparable detectivity to the best HgCdTe detectors at 300K. Higher uniformity over large areas, simpler growth and the possibility of having read-out circuits in the same GaAs chip are the advantages of this system over HgCdTe detectors for near room temperature operation.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hooman Mohseni, Hooman Mohseni, Erick J. Michel, Erick J. Michel, Manijeh Razeghi, Manijeh Razeghi, W. C. Mitchel, W. C. Mitchel, Gail J. Brown, Gail J. Brown, } "Growth and characterization of InAs/GaSb type-II superlattice for long-wavelength infrared detectors", Proc. SPIE 3287, Photodetectors: Materials and Devices III, (8 April 1998); doi: 10.1117/12.304497; https://doi.org/10.1117/12.304497

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