8 April 1998 P-type quantum well infrared photodetectors and pixelless long-wavelength infrared imaging devices
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Abstract
We present results on p-type quantum well IR photodetectors (QWIPs) based on GaAs substrates, and discuss issues related to the optimization of their performance. Due to the fact that a p-QWIP allows normal incidence absorption, the simplicity in device fabrication makes it interesting for implementing a pixel-less imaging device based on the integration of QWIP and light emitting diode.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hui Chun Liu, Hui Chun Liu, L. Li, L. Li, Louis B. Allard, Louis B. Allard, Margaret Buchanan, Margaret Buchanan, Zbigniew R. Wasilewski, Zbigniew R. Wasilewski, Gail J. Brown, Gail J. Brown, Frank Szmulowicz, Frank Szmulowicz, S. M. Hegde, S. M. Hegde, } "P-type quantum well infrared photodetectors and pixelless long-wavelength infrared imaging devices", Proc. SPIE 3287, Photodetectors: Materials and Devices III, (8 April 1998); doi: 10.1117/12.304478; https://doi.org/10.1117/12.304478
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